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OP905 Datasheet(PDF) 2 Page - TT Electronics. |
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OP905 Datasheet(HTML) 2 Page - TT Electronics. |
2 / 4 page © TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. PIN Silicon Photodiode OP905, OP906 Issue A 08/2016 Page 2 OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Reverse Breakdown Voltage 60 V Storage & Opera ng Temperature Range -40° C to +100° C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] 260° C (1) Reverse Breakdown Voltage 60 V Power Dissipa on 100 mW (2) Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS IL Reverse Light Current OP905 OP906 14 16 - - 32 35 µA VR = 5 V, EE = 0.50 mW/cm 2 (3) ID Reverse Dark Current - 1 60 nA VR = 30 V, EE = 0 (4) V(BR) Reverse Breakdown Voltage 60 - - V IR = 100 μA VF Forward Voltage - - 1.2 V IF = 1 mA CT Total Capacitance - 4 - pF VR = 20 V, EE = 0, f = 1.0 MHz tr Rise Time - 5 - ns tf Fall Time - 5 - VR = 20 V, λ = 850 nm, RL = 50 Ω Notes: (1) RMA flux is recommended. Dura on can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/° C above 25° C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the en re lens surface of the photodiode being tested. (4) Calculate the typical dark current in nA using the formula ID = 10 (0.042T A -1.5) where T A is ambient temperature in °C. |
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