NTE2563 datasheet(2/2 Pages) NTE

Part #	NTE2563

Description	Silicon Complementary Transistors High Current Switch

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector–Emitter Saturation Voltage

NTE2562

VCE(sat)

IC = 5A, IB = 0.25A

–

0.4

V

NTE2563

–

0.5

V

Collector–Base Breakdown Voltage

V(BR)CBO IC = 1mA, IE = 0

60

–

V

Collector–Emitter Breakdown Voltage

V(BR)CEO IC = 1mA, RBE = ∞

30

–

V

Emitter–Base Breakdown Voltage

V(BR)EBO IE = 1mA, IC = 0

6

–

V

Turn–On Time

NTE2562

ton

VCC = 10V, VBE = –5V,

–

0.2

–

µs

NTE2563

10IB1 = –10IB2 = IC = 5A,

Pulse Width = 20

µs,

–

0.1

–

µs

Storage Time

NTE2562

tstg

Pulse Width = 20

µs,

Duty Cycle = 1%

–

0.5

–

µs

NTE2563

–

0.3

–

µs

Fall Time

tf

–

0.03

–

µs

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.165

(4.2)

.669

(17.0)

Max

.531

(13.5)

Min

.100 (2.54)

.059 (1.5) Max

.114 (2.9) Max

.173 (4.4) Max

BC

E

.122 (3.1)

Dia

NOTE: Tab is isolated

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