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HZ11B1 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HZ11B1 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 8 page 
HZ Series Rev.2, Nov. 1999, page 2 of 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 °C Storage temperature Tstg -55 to +175 °C Electrical Characteristics (Ta = 25°C) Zener Voltage Reverese Current Dynamic Resistance V Z (V)* 1 Test Condition I R (µ µµµA) Test Condition r d (Ω Ω Ω Ω) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) HZ2 A1 1.6 1.8 5 25 0.5 100 5 A2 1.7 1.9 A3 1.8 2.0 B1 1.9 2.1 5 5 0.5 100 5 B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5 C3 2.4 2.6 HZ3 A1 2.5 2.7 5 5 0.5 100 5 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4 C3 3.3 3.5 HZ4 A1 3.4 3.6 5 5 1.0 100 5 A2 3.5 3.7 A3 3.6 3.8 Note: 1. Tested with DC. |
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