HUFA76504DK8 datasheet(1/13 Pages) FAIRCHILD

Part #	HUFA76504DK8

Description	2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Rev. A, June 4, 2001

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET® is a registered trademark of Fairchild Corporation. PSPICE® is a registered trademark of Cadence Corporation.

SABER© is a registered trademark of Avanti corporation.

HUFA76504DK8

2.3A, 80V, 0.222 Ohm, Dual N-Channel,

Logic Level UltraFET Power MOSFET

Packaging

Symbol

Features

• Ultra Low On-Resistance

- rDS(ON) = 0.200Ω, VGS = 10V

- rDS(ON) = 0.222Ω, VGS = 5V

• Simulation Models

- Temperature Compensated PSPICE™ and SABER

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.Fairchildsemi.com

• Internal RG = 50Ω

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Transient Thermal Impedance Curve vs Board Mounting

Area

Ordering Information

Absolute Maximum Ratings

TA = 25

oC, Unless Otherwise Specified

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.mtp.intersil.com/automotive.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

JEDEC MS-012AA

BRANDING DASH

1

2

3

4

5

DRAIN 1 (8)

SOURCE1 (1)

DRAIN 1 (7)

DRAIN 2 (6)

DRAIN 2 (5)

SOURCE2 (3)

GATE2 (4)

GATE1 (2)

PART NUMBER

PACKAGE

BRAND

HUFA76504DK8

MS-012AA

76504DK8

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUFA76504DK8T.

HUFA76504DK8

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

80

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

80

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±16

V

Drain Current

Continuous (TA= 25

oC, V

GS = 5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TA= 25

oC, V

GS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TA= 100

oC, V

GS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TA= 100

oC, V

GS = 4.5V) (Figure 2) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

2.3

2.5

1.1

Figure 4

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 17, 18

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5

20

W

mW/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

NOTES:

1.TJ = 25

oC to 125oC.

2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 1 second.

3. 228oC/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet

June 2001

[ /Title

(HUF7

6400S

K8)

/Sub-

ject

(60V,

0.072

Ohm,

4A, N-

Chan-

nel,

Logic

Level

UltraFE

Power

MOS-

FET)

/Author

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Chan-

nel,

Logic

Level

UltraFE

Power

MOS-

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