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M54587P Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. M54587P
Description  8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M54587P Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Mar.2002
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ns
ns
ton
toff
120
2400
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
CL = 15pF (note 1)
Turn-on time
Turn-off time
V
V
V
8
VCC
VCC–3.6
5
4
VCC–0.7
0
VCC
VIH
VIL
Collector current
Per channel
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75
°C)
IC
0
0
mA
400
200
Parameter
Limits
Symbol
Unit
Supply voltage
min
typ
max
“H” input voltage
“L” input voltage
VCC = 5V, Duty Cycle
P : no more than 34%
FP : no more than 15%
VCC = 5V, Duty Cycle
P : no more than 6%
FP : no more than 5%
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Supply voltage
Collector-emitter voltage
Input voltage
Collector current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
V
V
mA
mA
V
W
°C
°C
10
–0.5 ~ +50
–0.5 ~ VCC
500
500
50
1.79/1.1
–20 ~ +75
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
VCC
VCEO
VI
IC
IF
VR
Pd
Topr
Tstg
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85
°C)
✽ : The typical values are those measured under ambient temperature (Ta) of 25
°C. There is no guarantee that these values are obtained
under any conditions.
1.2
0.95
–290
1.4
0.1
1.9
3500
50
2000
V (BR) CEO
II
VF
IR
ICC
hFE
V
V
µA
V
µA
mA
2.4
1.6
–600
2.4
100
3
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Collector-emitter breakdown voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
Supply current (AN only Input)
DC amplification factor
ICEO = 100
µA
VI = VCC–3.6V
VI = VCC–3.6V
IF = 400mA
VR = 50V
VCC = 5V, VI = VCC–3.5V
VCC = 5V, VCE = 4V, IC = 350mA, Ta = 25
°C
VCE(sat)
Collector-emitter saturation voltage
IC = 400mA
IC = 200mA


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