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M54587P Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M54587P Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 5 page 
Mar.2002 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS INPUT 50% 50% 50% 50% OUTPUT ton toff PG INPUT VCC OUTPUT VO RL OPEN CL 50 Ω (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10 µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.4 ~ 4V (2)Input-output conditions : RL = 30 Ω, Vo = 10V, Vcc = 4V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Measured device TIMING DIAGRAM NOTE 1 TEST CIRCUIT Ambient temperature Ta ( °C) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 Thermal Derating Factor Characteristics M54587P M54587FP Output saturation voltage VCE(sat) (V) 0 0 200 100 300 400 500 0.5 1.0 1.5 2.0 Output Saturation Voltage Collector Current Characteristics VI = 1.4V VCC = 5V Ta = –20 °C Ta = 25 °C Ta = 75 °C Duty cycle (%) 0 0 200 100 300 400 500 20 40 60 80 100 Duty Cycle-Collector Characteristics (M54587P) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 5V •Ta = 25 °C 1 2 7 3 4 5 8 6 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 5V •Ta = 75 °C Duty cycle (%) 0 0 200 100 300 400 500 20 40 60 80 100 Duty Cycle-Collector Characteristics (M54587P) 1 2 7 3 4 5 8 6 |
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