©2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

April 2005

FDFM2P110 Rev. C2

FDFM2P110

MOSFET and Schottky Diode

Features

■ Low Profile – 0.8mm maximum – in the new package

MicroFET 3x3 mm

Applications

■ DC-DC Converter

General Description

FDFM2P110 combines the exceptional performance of Fairchild’s

PowerTrench MOSFET technology with a very low forward voltage

drop Schottky barrier rectifier in a MicroFET package.

This device is designed specifically as a single package solution

for DC to DC converters. It features a fast switching, low gate

charge MOSFET with very low on-state resistance.

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

–20

V

Gate-Source Voltage

±12

V

Drain Current

– Continuous

(Note 1a)

–3.5

A

– Pulsed

–10

Schottky Repetitive Peak Reverse Voltage

20

V

Schottky Average Forward Current

(Note 1a)

2

A

Power Dissipation (Steady State)

(Note 1a)

2.4

W

(Note 1b)

1.2

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

60

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1b)

145

Device Marking

Device

Reel Size

Tape width

Quantity

2P110

FDFM2P110

7"

12mm

3000 units

MLP 3x3

Pin 1

Bottom

Top

1

2

3

6

5

4