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NTE2558 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2558
Description  Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2558 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2558
Silicon NPN Transistor
Darlington, High Voltage, High Speed Switch
w/ Damper Diode
Features:
D High Reliability
D High Collector–Base Breakdown Voltage
D On–Chip Damper Diode
Applications:
D High–Voltage, High–Power Switching
D Induction Cookers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, VCEO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current. IB
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (TC = +25°C), PC
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 800V, IE = 0
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
600
mA
DC Current Gain
hFE
VCE = 5V, IC = 15A
25
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 100mA
800
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 15A, IB = 0.75A
3.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 15A, IB = 0.75A
2.5
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 5mA, IE = 0
150
0
V
Diode Forward Voltage
VF
IEC = 15A
2.0
V
Fall Time
tf
IC = 15A, IB1 = 1A,
IB2 = –5A, VCC = 200V,
RL = 13.3Ω
2.0
µs


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