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MPSA92 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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MPSA92 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page MPSA92 Characteristics Kennwerte Tj = 25°C Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0 - VCB = 200 V - ICBO – – 250 nA Emitter-Base cutoff current – Emitterreststrom IB = 0 - VEB = 3 V - IEBO – – 100 nA Collector saturation voltage – Kollektor-Sättigungsspannung 1) - IC = 20 mA - IB = 2 mA - VCEsat – – 500 mV Base saturation voltage – Basis-Sättigungsspannung 4) - IC = 20 mA - IB = 2 mA - VBEsat – – 0.9 V DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 10 V - IC = 1 mA - IC = 10 mA - IC = 30 mA hFE 25 40 25 – – – – – – Gain-Bandwidth Product – Transitfrequenz - VCE = 20 V, - IC = 10 mA, f = 100 MHz fT – 70 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 20 V, IE = ie = 0, f = 1 MHz CCBO – – 7 pF Thermal resistance junction – ambient Wärmewiderstand Sperrschicht – Umgebung RthA < 200 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case Gültig, wenn die Anschlußdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 http://www.diotec.com/ © Diotec Semiconductor AG [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) 2 Verlustleistung in Abh. von d. Umgebungstemp.) 2 |
Similar Part No. - MPSA92_18 |
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Similar Description - MPSA92_18 |
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