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M54561P Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M54561P
Description  7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M54561P Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Aug. 1999
27k
20k
7k
3k
INPUT
OUTPUT
SUB*
VS
The seven circuits share the VS and SUB.
* SUB must be the lowest voltage in a circuit.
The diodes shown by broken line are parasite diodes and must
not be used.
Unit :
PIN CONFIGURATION (TOP VIEW)
DESCRIPTION
M54561P is seven-circuit output-sourcing Darlington transis-
tor arrays. The circuits are made of PNP and NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
q
High breakdown voltage (BVCEO
≥ 40V)
q
High-current driving (Io(max) = –300mA)
q
With output clamping diodes
q
Active “L” input
q
Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M54561P have seven circuits of current-sourcing out-
puts. Darlington transistor, which are made of PNP transis-
tor and NPN transistor. Resistance of 20k
Ω is connected be-
tween PNP transistor base and input pin. PNP transistor
emitters and NPN transistor collector is connected VS (pin 8),
and spike killer clamping diode is provided between each
output pins.
Output currene is 300mA maximum and supply voltage VS is
40V maximum operate Active “L” input.
CIRCUIT SCHEMATIC
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
1
IN1
INPUTS
OUTPUTS
IN2
IN3
IN4
IN5
IN6
IN7
SUB
VS
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
Outline 16P4
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
–0.5 ~ VS
40
–0.5 ~ VS
–300
–300
40
1.47
–20 ~ +75
–55 ~ +125
Ratings
Unit
Symbol
Parameter
Conditions
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
VCEO
VS
VI
IO
IF
VR
Pd
Topr
Tstg
Output, L
Current per circuit output, H
Ta = 25°C, when mounted on board
V
V
V
mA
mA
V
W
°C
°C


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