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M54561P Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M54561P Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page 
Aug. 1999 — 1.65 1.45 –150 –1.6 — 8000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE — — — — — — 1000 IS (leak) VF IR hFE — — — 0 VS–0.2 0 VS VIH VIL V V V 40 VS+0.3 VS–3 Parameter Limits Symbol Unit IO 0 0 — — –300 –100 mA VCE (sat) 100 2.4 2.0 –250 –2.4 100 — VS = 40V VI = VS–3V, IO = –300mA VI = VS–3V, IO = –100mA VI = VS–3.5V, IF = –300mA VR = 40V VCE = 4V, IO = –300mA, Ta =25°C Symbol Unit Parameter Test conditions Limits + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. µA V µA — V Supply voltage RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C) Percent duty cycle less than 10% Percent duty cycle less than 50% Output current per channel “H” input voltage “L” input voltage min typ max min typ+ max Supply leak current Clamping diode forward voltage Clamping diode reverse current DC amplification factor Collector-emitter saturation voltage ns ns ton toff — — 200 2500 — — Symbol Unit Parameter Test conditions Limits min typ max Turn-on time Turn-off time CL = 15pF (note 1) SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C) II Input current µA ton 50% 50% 50% INPUT OUTPUT 50% toff PG 50 Ω (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10 µs, tr = 6ns, tf = 6ns, ZO = 50Ω VIN = 7 to 10.3V (2) Input-output conditions : RL = 40 Ω, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes CL RL Measured device INPUT VS OUTPUT OPEN TIMING DIAGRAM NOTE 1 TEST CIRCUIT |
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