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M54561P Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. M54561P
Description  7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M54561P Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Aug. 1999
1.65
1.45
–150
–1.6
8000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
1000
IS (leak)
VF
IR
hFE
0
VS–0.2
0
VS
VIH
VIL
V
V
V
40
VS+0.3
VS–3
Parameter
Limits
Symbol
Unit
IO
0
0
–300
–100
mA
VCE (sat)
100
2.4
2.0
–250
–2.4
100
VS = 40V
VI = VS–3V, IO = –300mA
VI = VS–3V, IO = –100mA
VI = VS–3.5V,
IF = –300mA
VR = 40V
VCE = 4V, IO = –300mA, Ta =25°C
Symbol
Unit
Parameter
Test conditions
Limits
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
µA
V
µA
V
Supply voltage
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Percent duty cycle less
than 10%
Percent duty cycle less
than 50%
Output current
per channel
“H” input voltage
“L” input voltage
min
typ
max
min
typ+
max
Supply leak current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
Collector-emitter saturation voltage
ns
ns
ton
toff
200
2500
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
II
Input current
µA
ton
50%
50%
50%
INPUT
OUTPUT
50%
toff
PG
50
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VIN = 7 to 10.3V
(2) Input-output conditions : RL = 40
Ω, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
CL
RL
Measured device
INPUT
VS
OUTPUT
OPEN
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT


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