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DMN7022LFGQ-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN7022LFGQ-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN7022LFGQ Document number: DS39840 Rev. 2 - 2 2 of 6 www.diodes.com August 2017 © Diodes Incorporated DMN7022LFGQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = 10V Steady State TA = +25°C TA = +70°C ID 7.8 6.2 A Continuous Drain Current (Note 8) VGS = 10V Steady State TC = +25°C TC = +70°C ID 23 18 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 56 A Maximum Continuous Body Diode Forward Current (Note 6) IS 2.1 A Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) ISM 50 A Avalanche Current, L = 0.1mH (Note 9) IAS 28.8 A Avalanche Energy, L = 0.1mH (Note 9) EAS 42.2 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 6) PD 0.9 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 125 °C/W t<10s 67 Total Power Dissipation (Note 7) PD 2 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RJA 62 °C/W t<10s 34 Thermal Resistance, Junction to Case (Note 8) RJC 6.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BVDSS 75 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current (TJ = +25°C ) IDSS — — 1 µA VDS = 75V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage VGS(TH) 1 — 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 14.6 22 m Ω VGS = 10V, ID = 7.2A — 20.5 28 VGS = 4.5V, ID = 6.4A Diode Forward Voltage VSD — 0.72 — V VGS = 0V, IS = 3.2A DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss — 2737 — pF VDS = 35V, VGS = 0V, f = 1MHz Output Capacitance Coss — 126 — pF Reverse Transfer Capacitance Crss — 96.1 — pF Gate Resistance Rg — 0.89 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 26.4 — nC VDS = 38V, ID = 7.2A Total Gate Charge (VGS = 10V) Qg — 56.5 — nC Gate-Source Charge Qgs — 12 — nC Gate-Drain Charge Qgd — 11.8 — nC Turn-On Delay Time tD(ON) — 6.1 — ns VGS = 10V, VDS = 38V, Rg = 1Ω, ID = 5.7A Turn-On Rise Time tR — 5.7 — ns Turn-Off Delay Time tD(OFF) — 19.6 — ns Turn-Off Fall Time tF — 3.9 — ns Body Diode Reverse Recovery Time tRR — 26.2 — ns IF = 5.7A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 25.2 — nC Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMN7022LFGQ-7 |
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Similar Description - DMN7022LFGQ-7 |
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