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DMN62D0UDW Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN62D0UDW
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN62D0UDW Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN62D0UDW
Document number: DS38029 Rev. 2 - 2
4 of 7
www.diodes.com
August 2016
© Diodes Incorporated
DMN62D0UDW
0
0.5
1
1.5
2
2.5
3
3.5
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS=2.5V, ID=50mA
V
GS=4.5V, ID=100mA
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D=250μA
I
D=1mA
0
0.2
0.4
0.6
0.8
1
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS=0V, TA=-55℃
V
GS=0V, TA=25℃
V
GS=0V, TA=85℃
V
GS=0V, TA=125℃
V
GS=0V, TA=150℃
1
10
100
0
5
10
15
20
25
30
35
40
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0.001
0.01
0.1
1
10
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(MAX)=150℃
T
C=25℃
Single Pulse
DUT on 1*MRP board
V
GS=4.5V
R
DS(ON) Limited
DC
P
W=10s
P
W=1s
P
W=100ms
P
W=10ms
P
W=1ms
P
W=100μs
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0.1
0.2
0.3
0.4
0.5
Q
g (nC)
Figure 11. Gate Charge
V
DS=10V, ID=250mA


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