Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

−0.3V to +4V

LVCMOS/LVTTL Input

Voltage

−0.3V to (V

CC

+0.3V)

Bus LVDS Driver Output

Voltage

−0.3V to +3.9V

Bus LVDS Output Short

Circuit

Duration

10ms

Package Thermal

Resistance

θ

34˚C/W

θ

8˚C/W

Storage Temperature

−65˚C to +150˚C

Junction Temperature

+125˚C

Lead Temperature

(Soldering, 10 seconds)

+225˚C

ESD Rating (HBM)

Reliability Information

Transistor Count:

37.5k

Recommended Operating

Conditions

Min

Typ

Max

Units

Supply Voltage (V

3.0

3.3

3.6

V

Operating Free Air

Temperature (T

−40

+25

+85

˚C

Clock Rate

25

66

MHz

Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified.(Note 2) (Note 3)

Symbol

Parameter

Conditions

Pin/Freq.

Min

Typ

Max

Units

LVCMOS/LVTTL DC Specifications

V

IH

High Level Input Voltage

DINn[0-9], TCLK,

MS_PWDN, PWDNn,

SYNCn, DEN,

BIST_ACT,

(Note 4)

2.0

V

CC

V

V

IL

Low Level Input Voltage

GND

0.8

V

V

CL

Input Clamp Voltage

I

−0.87

−1.5

V

I

IN

Input Current

V

−10

+/− 1

+10

µA

Bus LVDS DC SpecificationsOver recommended operating supply and temperature unless otherwise specified.

V

OD

Output Differential Voltage

(DO+) - (DO-)

RL = 100

Ω,C

10pF to GND

DOn+, DOn-

350

500

550

mV

∆V

OD

Output Differential Voltage

Unbalance

335

mV

V

OS

Offset Voltage

1.1

1.2

1.3

V

∆V

OS

Offset Voltage Unbalance

2

35

mV

I

OS

Output Short Circuit Current

DO = 0V, Din = H,

MS_PWDN and DEN

= 2.4V

−50

-90

mA

I

OZ

Tri-State Output Current

MS_PWDN or DEN =

0.8V, DO = 0V OR

VDD

-10

+/-1

10

µA

I

OX

Power-Off Output Current

VDD = 0V, DO = 0V

or 3.6V

-10

+/− 1

10

µA

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