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LMX2314 Datasheet(PDF) 8 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2314
Description  1.2 GHz Frequency Synthesizer for RF Personal Communications
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMX2314 Datasheet(HTML) 8 Page - National Semiconductor (TI)

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Charge Pump Current Specification Definitions
TLW11766 – 41
I1 e CP sink current at VDo e VP b DV
I2 e CP sink current at VDo e VP 2
I3 e CP sink current at VDo e DV
I4 e CP source current at VDo e VP b DV
I5 e CP source current at VDo e VP 2
I6 e CP source current at VDo e DV
D
V e Voltage offset from positive and negative rails Dependent on VCO tuning range relative to VCC and ground Typical values are between 05V and 10V
1 IDo vs VDo e Charge Pump Output Current magnitude variation vs Voltage e
lI1l b lI3l
lI1l a lI3l
100%
and
lI4l b lI6l
lI4l a lI6l
100%
2 IDo-sink vs IDo-source e Charge Pump Output Current Sink vs Source Mismatch e
lI2l b lI5l
lI2l a lI5l
100%
3 IDo vs TA e Charge Pump Output Current magnitude variation vs Temperature e
lI2
temp
l b lI2
25 C
l lI2
25 C
l 100% and lI5
temp
l b lI5
25 C
l lI5
25 C
l 100%
4 Kw e
Phase detectorcharge pump gain constant e
lI2l a lI5l
RF Sensitivity Test Block Diagram
TLW11766 – 42
Note 1
N e 10000
R e 50
P e 64
Note 2
Sensitivity limit is reached when the error of the divided RF output fOUT is greater than or equal to 1 Hz
8


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