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K4C89093AF-ACFB Datasheet(PDF) 8 Page - Samsung semiconductor

Part # K4C89093AF-ACFB
Description  288Mb x18 Network-DRAM2 Specification
Download  55 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4C89093AF-ACFB Datasheet(HTML) 8 Page - Samsung semiconductor

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K4C89183AF
- 8 -
REV. 0.7 Jan. 2005
1. All voltages are referenced to Vss, VssQ.
2. VREF is expected to track variations in VddQ DC level of the transmitting device.
Peak to peak AC noise on VREF may not exceed ± 2% of VREF (DC).
3. Overshoot Iimit : VIH(max.) = VddQ + 0.7V with a pulse width <= 5ns
4. Undershoot Iimit : VIL(min.) = -0.7V with a pulse width <= 5ns
5. VIH(DC) and VIL(DC) are levels to maintain the current logic state.
6. VIH(AC) and VIL(AC) are levels to change to the new logic state.
7. VID is magnitude of the difference between CLK input level and CLK input level.
8. The value of Vx(AC) is expected to equal VddQ/2 of the transmitting device.
9. VISO means [VICK(CLK) + VICK(CLK)]/2
10. Refer to the figure below.
Notes
:
11. In the case of external termination, VTT(Termination Voltage) should be gone in the range of VREF(DC) ± 0.04V.
Pin Capacitance (V
DD= 2.5V, VDDQ = 1.8V, f = 1 MHz, Ta = 25
oC)
Note : These parameters are periodically sampled and not 100% tested.
Symbol
Parameter
Min
Max
Delts
Units
CIN
Input Pin Capacitance
1.5
3.0
0.25
pF
CINC
Clock Pin (CLK, CLK) Capacitance
1.5
3.0
0.25
pF
CI/O
DQ, DS, QS Capacitance
2.5
3.5
0.5
pF
CNC
NC Pin Capacitance
-
1.5
-
pF
CLK
CLK
VSS
VID(AC)
0 V Differential
VISO
VSS
VICK
VISO(min)
VX
VX
VX
VX
VICK
VICK
VICK
VISO(max)
VX
VID(AC)


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