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IPS032G Datasheet(PDF) 2 Page - International Rectifier

Part # IPS032G
Description  SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IPS032G Datasheet(HTML) 2 Page - International Rectifier

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IPS031G/IPS032G
2
www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
31
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25
oC unless otherwise specified). PCB mounting uses the standard footprint with 70
µm
copper thickness. All Sources leads of each mosfet must be connected together to get full current capability
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
47
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd cont.
Diode max. continuous current (1)
(rth=125oC/W) IPS031G
1.4
(for all sd mosfets, rth=85oC/W) IPS032G
2
Isd pulsed Diode max. pulsed current (1) (for ea. mosfet)
—15
Pd
Maximum power dissipation
(1)
(rth=125oC/W) IPS031G
1
W
(for all Pd mosfets, rth=85oC/W) IPS032G
1.5
ESD1
Electrostatic discharge voltage (Human Body)
4
C=100pF, R=1500
Ω,
ESD2
Electrostatic discharge voltage (Machine Model)
0.5
C=200pF, R=0
Ω, L=10µH
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
150
V
A
kV
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth1
Thermal resistance with standard footprint
100
Rth2
Thermal resistance with 1" square footprint
65
Rth1
Thermal resistance with standard footprint
(2 mos on)
(2 mosfets on)
85
Rth2
Thermal resistance with standard footprint
(1 mos on)
(1 mosfet on)
100
Rth3
Thermal resistance with 1" square footprint
(2 mos on)
(2 mosfets on)
60
Thermal Chacteristics
SOIC-8
SOIC-16
oC/W
oC


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