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IPS032G Datasheet(PDF) 2 Page - International Rectifier |
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IPS032G Datasheet(HTML) 2 Page - International Rectifier |
2 / 11 page IPS031G/IPS032G 2 www.irf.com (1) Limited by junction temperature (pulsed current limited also by internal wiring) 31 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref- erenced to SOURCE lead. (TAmbient = 25 oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. All Sources leads of each mosfet must be connected together to get full current capability Symbol Parameter Min. Max. Units Test Conditions Vds Maximum drain to source voltage — 47 Vin Maximum input voltage -0.3 7 Iin, max Maximum IN current -10 +10 mA Isd cont. Diode max. continuous current (1) (rth=125oC/W) IPS031G — 1.4 (for all sd mosfets, rth=85oC/W) IPS032G — 2 Isd pulsed Diode max. pulsed current (1) (for ea. mosfet) —15 Pd Maximum power dissipation (1) (rth=125oC/W) IPS031G — 1 W (for all Pd mosfets, rth=85oC/W) IPS032G — 1.5 ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500 Ω, ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0 Ω, L=10µH T stor. Max. storage temperature -55 150 Tj max. Max. junction temperature -40 150 V A kV Symbol Parameter Min. Typ. Max. Units Test Conditions Rth1 Thermal resistance with standard footprint — 100 — Rth2 Thermal resistance with 1" square footprint — 65 — Rth1 Thermal resistance with standard footprint (2 mos on) (2 mosfets on) — 85 — Rth2 Thermal resistance with standard footprint (1 mos on) (1 mosfet on) — 100 — Rth3 Thermal resistance with 1" square footprint (2 mos on) (2 mosfets on) — 60 — Thermal Chacteristics SOIC-8 SOIC-16 oC/W oC |
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