DMN3200U

Document number: DS31188 Rev. 7 - 2

1 of 6

www.diodes.com

May 2016

© Diodes Incorporated

DMN3200U

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Low On-Resistance



90m



110m



200m

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

ESD Protected Gate

•

Fast Switching Speed

•

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

•

Halogen and Antimony Free. “Green” Device (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT23

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram

•

Terminals: Finish

 Matte Tin Annealed over Copper

Leadframe. Solderable per MIL-STD-202, Method 208

•

Weight: 0.008 grams (Approximate)

Part Number

Case

Packaging

DMN3200U-7

SOT23

3,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2007

~

2016

2017

2018

2019

2020

2021

2022

Code

U

~

D

E

F

G

H

I

J

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SOT23

Top View

Equivalent Circuit

Top View

ESD PROTECTED TO 3kV

D

G

S

32N = Marking Code

YM = Date Code Marking

Y or

= Year (ex: D = 2016)

M = Month (ex: 9 = September)

32N

Y

D

S

G

Gate Protection

Diode