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KT20A120 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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KT20A120 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page  KT20A120, KT20K150 KT20A120, KT20K150 Fast Efficient Rectifier Diodes – Protectifiers® Schnelle Gleichrichter für hohen Wirkungsgrad – Protectifiers® IFAV = 20 A VF1 < 0.85 V Tjmax = 175°C VWM = 120, 150 V IFSM = 350/385 A trr < 300 ns Version 2017-12-18 TO-220AC Dimensions - Maße [mm] Typical Applications Rectification of medium frequencies Free-wheeling diodes for power tools and DC motors; Polarity Protection, Solar Bypass diodes Commercial grade 1) Typische Anwendungen Gleichrichtung mittlerer Frequenzen Freilaufdioden für Elektrowerkzeuge und DC-Motoren; Verpolschutz Solar-Bypassdioden Standardausführung 1) Features Low forward voltage drop Low thermal resistance High forward surge capability High reverse robustness Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Niedrige Fluss-Spannung Niedriger Wärmewiderstand Hohe Stoßstromfestigkeit Hohe sperrseitige Robustheit Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1 ) Packed in tubes/cardboards 50/1000 Verpackt in Stangen/Kartons Weight approx. 1.8 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL N/A Maximum ratings 2) Grenzwerte 2) Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C 3) IFAV 20 A Steady state power dissipation – Verlustleistung im Dauerbetrieb TC = 100°C 3) P tot 25 W Peak pulse power dissipation Impuls-Verlustleistung 10/1000µs pulse 4) PPPM 750 W Max. reverse peak pulse current Max. Impuls-Strom in Sperr-Richtung 8/20µs pulse 5) IPPM 200 A ESD rating ESD-Festigkeit JESD22-A114 Contact discharge Kontaktentladung R = 1.5 kΩ C = 100 pF 3B 20 kV Repetitive peak forward current – Periodischer Spitzenstrom f > 15 Hz IFRM 70 A 3) Peak forward surge current Stoßstrom in Fluss-Richtung Half sine-wave Sinus-Halbwelle 50 Hz (10 ms) 60 Hz (8.3 ms) IFSM 350 A 385 A Rating for fusing – Grenzlastintegral t < 10 ms i2t 612 A2s Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj -50...+175°C +200°C 6) Storage temperature Lagerungstemperatur TS -50...+175°C 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben 3 Measured at heat flange – Gemessen an der Kühlfahne 4 See curve I PP = f (t) 10/1000µs – Siehe Kurve IPP = f (t) 10/1000µs 5 See curve I PP = f (t) 8/20µs – Siehe Kurve IPP = f (t) 8/20µs 6 Meets the Requirements of IEC 61215 bypass diode thermal test Erfüllt die Anforderungen des IEC 61215 Bypass-Diodentests © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS 4 3 1 4 3 1 A K 4 3 1 Type Typ 5.08±0.1 0.8 ±0.2 1.3 ±0.1 10.1 ±0.3 Ø ±0.2 3.8 1.2±0.2 0.42 ±0.1 4.5 ±0.2 2.67±0.2 |
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