DMN3035LWN-7 datasheet(3/7 Pages) DIODES

Part #	DMN3035LWN-7

Description	30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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3 / 7 page

DMN3035LWN

Document number: DS37528 Rev. 3 - 2

3 of 7

www.diodes.com

October 2016

DMN3035LWN

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0

0.2 0.4 0.6 0.8

1

1.2 1.4 1.6 1.8

2

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V

GS=2.0V

V

GS=2.5V

V

GS=3.0V

V

GS=4.0V

V

GS=4.5V

V

GS=5.0V

V

GS=8.0V

V

GS=10V

0

0.2

0.4

0.6

0.8

1

0.5

1

1.5

2

2.5

3

V

GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

V

DS=5V

-55℃

+25℃

+85℃

+125℃

+150℃

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0

5

10

15

20

25

30

I

D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current

and Gate Voltage

V

GS=4.5V

V

GS=10V

0.01

0.02

0.03

0.04

0.05

0

5

10

15

20

I

D, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs. Drain Current

and Temperature

V

GS=10V

-55℃

+25℃

+85℃

+125℃

+150℃

0.6

0.8

1

1.2

1.4

1.6

1.8

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Temperature

V

GS=10V, ID=4.8A

V

GS=4.5V, ID=4.3A

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

2

4

6

8

10

V

GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

I

D=4.3A

I

D=4.8A

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