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DMN3009LFVW Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN3009LFVW
Description  30V N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3009LFVW Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN3009LFVW
Document number: DS39290 Rev. 1 - 2
4 of 7
www.diodes.com
December 2017
© Diodes Incorporated
DMN3009LFVW
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS=10V, ID=30A
V
GS=4.5V, ID=15A
0.2
0.5
0.8
1.1
1.4
1.7
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D=250µA
I
D=1mA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
A=-55℃
V
GS=0V
T
A=25℃
T
A=85℃
T
A=125℃
T
A=150℃
1
10
100
1000
10000
100000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
25℃
85℃
125℃
150℃
100
1000
10000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
Q
g (nC)
Figure 12. Gate Charge
V
DS=15V, ID=15A


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