Electronic Components Datasheet Search |
|
DMN2400UFB4-7R Datasheet(PDF) 3 Page - Diodes Incorporated |
|
DMN2400UFB4-7R Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 9 page DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 3 of 9 www.diodes.com March 2017 © Diodes Incorporated DMN2400UFB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +85°C ID 0.75 0.55 A Pulsed Drain Current (Notes 5 & 6) IDM 3 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.47 mW Thermal Resistance, Junction to Ambient RθJA 258 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 6. Device mounted on minimum recomm ended pad layout test board, 10μs pulse duty cycle = 1%. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 100 50 nA VDS = 20V, VGS = 0V VDS = 5V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±3V, VDS = 0V Gate-Source Leakage IGSS — — ±1.0 μA VGS = ±4.5V, VDS = 0V Gate-Source Leakage IGSS — — ±50 μA VGS = ±10V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.5 — 0.9 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — — 0.55 Ω VGS = 4.5V, ID = 600mA — — 0.75 VGS = 2.5V, ID = 500mA — — 0.9 VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| — 1.0 — S VDS = 10V, ID = 400mA Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 36.0 — pF VDS =16V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 5.7 — pF Reverse Transfer Capacitance Crss — 4.2 — pF Total Gate Charge Qg — 0.5 — nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs — 0.07 — nC Gate-Drain Charge Qgd — 0.1 — nC Turn-On Delay Time tD(ON) — 4.11 — ns VDD = 10V, VGS = 4.5V, RL = 47Ω, Rg = 10Ω, ID = 200mA Turn-On Rise Time tR — 3.82 — ns Turn-Off Delay Time tD(OFF) — 14.8 — ns Turn-Off Fall Time tF — 9.6 — ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMN2400UFB4-7R |
|
Similar Description - DMN2400UFB4-7R |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |