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T0835NMP Datasheet(PDF) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Part No. T0835NMP
Description  RoHS products
Download  6 Pages
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Maker  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Homepage  http://www.hwdz.com.cn
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T0835NMP Datasheet(HTML) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

   
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T0835NMP
版本:201603A
3/6
电特性 ELECTRICAL CHARACTERISTIC (TC=25℃)
Parameter
符 号
Symbol
测 试 条 件
Condition
最小
Min
典型
Typ
最大
Max
单位
Unit
峰值重复断态电流
Peak Repetitive Blocking
Current
IDRM
VDM=VDRM, Tj=150℃,
gate open
-
-
1.0
mA
峰值通态电压
Peak on-state voltage
VTM
ITM=11.3A
-
1.3
1.55
V
MT1(-),MT2(+),G(+)
-
-
35
mA
MT1(-),MT2(+),G(-)
-
-
35
mA
门极触发电流
Gate trigger current
IGT
VDM=12V,
RL=100Ω
MT1(+),MT2(-),G(-)
-
-
35
mA
MT1(-),MT2(+),G(+)
-
0.7
1.0
V
MT1(-),MT2(+),G(-)
-
0.7
1.5
V
门极触发电压
Gate trigger voltage
VGT
VDM=12V,
RL=100Ω
MT1(+),MT2(-),G(-)
-
0.7
1.5
V
维持电流
Holding current
IH
VDM=12V, IGT=0.1A
-
-
50
mA
MT1(-),MT2(+),G(+)
-
-
50
mA
MT1(-),MT2(+),G(-)
-
-
50
mA
擎住电流
Latching current
IL
VDM=12V,
IGT=0.1A
MT1(+),MT2(-),G(-)
-
-
50
mA
断态临界电压上升率
Rise of off- state voltage
dV/dt
VDM=67% VDRM(MAX),
Tj=150℃, gate open
1000
-
-
V/μs
门极开通 时间 Gate
controlled turn-on time
tgt
ITM=6A, VDM=VDRM(MAX),
IG=0.1A, dIG/dt=5A/μS
-
2
-
μs
热特性 THERMAL CHARACTERISTIC
Parameter
Symbol
Condition
最小
Min
典型
Typ
最大
Max
单位
Unit
结到安装面的热阻
Thermal resistance
junctiontomounting base
Rth(j-mb) full cycle(TO-220MF-K1)
2.0 ℃/W
电绝缘特性 ELECTRICAL ISOLATION
Parameter
Symbol
Condition
数 值
Value
单位
Unit
绝缘电压
Isolation voltage
VISOL
1 minute, leads to mounting tab
TO-220MF-K1
2000
V


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