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NTE2511 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2511
Description  Silicon Complementary Transistors High Frequency Video Output for HDTV
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2511 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2511 (NPN) & NTE2512 (PNP)
Silicon Complementary Transistors
High Frequency Video Output for HDTV
Features:
D High Gain Bandwidth Product: fT = 800MHz Typ.
D Low Reverse Transfer Capacitance and Excellent HF Response:
NTE2511: Cre = 2.9pF
NTE2512: Cre = 4.6pF
Applications:
D Very High–Definition CRT Display
D Video Output
D Color TV Chroma Output
D Wide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, VCEO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter base Voltage, VEBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
TA = +25°C
1.2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 60V, IE = 0
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 2V, IC = 0
1.0
µA
DC Current Gain
hFE
VCE = 10V, IC = 50mA
100
320
VCE = 10V, IC = 400mA
20
Gain Bandwidth Product
fT
VCE = 10V, IC = 100mA
800
MHz


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