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CP210 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CP210
Description  Small Signal Transistors N - Channel Silicon Amplifer J FET Chip
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CP210 Datasheet(HTML) 1 Page - Central Semiconductor Corp

  CP210 Datasheet HTML 1Page - Central Semiconductor Corp CP210 Datasheet HTML 2Page - Central Semiconductor Corp CP210 Datasheet HTML 3Page - Central Semiconductor Corp  
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PRINCIPAL DEVICE TYPES
2N4416A
CMPF4416A
Process
EPITAXIAL PLANAR
Die Size
15 x 15 MILS
Die Thickness
8.0 MILS
Drain Bonding Pad Area
3.2 X 4.0 MILS
Source Bonding Pad Area
3.2 X 4.0 MILS
Gate Bonding Pad Area
3.2 X 4.0 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 6,000Å
PROCESS DETAILS
BACKSIDE GATE
GEOMETRY
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax:
(631) 435-1824
www.centralsemi.com
R3 (9 -September 2003)
GROSS DIE PER 4 INCH WAFER
53,730
Central
Semiconductor Corp.
TM
PROCESS
CP210
Small Signal Transistors
N - Channel Silicon Amplifer J FET Chip


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