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NTE2505 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE2505
Description  Silicon NPN Transistor Low Frequency, General Purpose Amp
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2505 Datasheet(HTML) 2 Page - NTE Electronics

   
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
30
V
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
25
V
Emitter Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
15
V
Turn–On Time
ton
VCC = 10V, VBE = –5V,
0.14
µs
Storage Time
tstg
100IB1 = –100IB2 = IC = 700mA,
Pulse Width = 20
µs,
1.35
µs
Fall Time
tf
Pulse Width = 20
µs,
Duty Cycle
≤ 1%
0.1
µs
.039 (1.0)
.039 (1.0)
.137
(3.5)
.122
(3.1)
.177
(4.5)
.161
(4.1)
.271 (6.9)
.098
(2.5)
.098 (2.5)
BC
E


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