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NTE2505 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2505
Description  Silicon NPN Transistor Low Frequency, General Purpose Amp
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2505 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2505
Silicon NPN Transistor
Low Frequency, General Purpose Amp
Features:
D High Current Capacity
D High DC Current Gain
D Low Collector Emitter Saturation Voltage
D High Emitter Base Breakdown Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
400mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
100
nA
Emitter Cutoff Current
IEBO
VEB = 10V, IC = 0
100
nA
DC Current Gain
hFE
VCE = 5V, IC = 500mA
800
1500 3200
VCE = 5V, IC = 1A
600
Gain–Bandwidth Product
fT
VCE = 10V, IC = 50mA
260
MHz
Output Capacitance
Cob
VCB = 10V, f = 1MHz
27
pF
Collector Emitter Saturation Voltage
VCE(sat)
IC = 1A, IB = 20mA
0.15
0.5
V
Base Emitter Saturation Voltage
VBE(sat)
IC = 1A, IB = 20mA
0.85
1.2
V


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