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TPW60R080CFD Datasheet(PDF) 2 Page - Wuxi Unigroup Microelectronics Company |
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TPW60R080CFD Datasheet(HTML) 2 Page - Wuxi Unigroup Microelectronics Company |
2 / 8 page TPV60R080CFD, TPW60R080CFD V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, ID = 250µA 600 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 600V, VGS = 0V, TJ = 25ºC -- -- 5 μA V DS = 600V, VGS = 0V, TJ = 150ºC -- -- 100 Gate-Source Leakage I GSS V GS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage V GS(th) V DS = VGS, ID = 250µA 2.5 -- 4.5 V Drain-Source On-Resistance (Note3) R DS(on) V GS = 10V, ID = 20A -- 65 80 mΩ Forward Transconductance (Note3) g fs V DS = 10V, ID = 20A -- 40 -- S Dynamic Input Capacitance C iss V GS = 0V, V DS = 50V, f = 1.0MHz -- 5100 -- pF Output Capacitance C oss -- 225 -- Reverse Transfer Capacitance C rss -- 6.2 -- Total Gate Charge Q g V DD = 480V, ID = 47A, V GS = 10V -- 90 -- nC Gate-Source Charge Q gs -- 24 -- Gate-Drain Charge Q gd -- 30 -- Turn-on Delay Time t d(on) V DD = 400V, ID = 26A, R G = 1.7Ω -- 16 -- ns Turn-on Rise Time t r -- 12 -- Turn-off Delay Time t d(off) -- 83 -- Turn-off Fall Time t f -- 5 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S T C = 25ºC -- -- 47 A Pulsed Diode Forward Current I SM -- -- 141 Body Diode Voltage V SD T J = 25ºC, ISD = 47A, VGS = 0V -- 0.9 1.2 V Reverse Recovery Time t rr V R = 400V, IF = 26A, di F/dt = 100A/μs -- 180 -- ns Reverse Recovery Charge Q rr -- 1 -- μC Peak Reverse Recovery Current I rrm -- 10 -- A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. I AS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% 2 |
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