NGD15N41CL datasheet(3/12 Pages) ONSEMI

Part #	NGD15N41CL

Description	Ignition IGBT 15 Amps, 410 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL

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3

ELECTRICAL CHARACTERISTICS (continued)

Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

ON CHARACTERISTICS (continued) (Note 3)

Collector−to−Emitter On−Voltage

VCE(on)

I

60A

TJ = 25°C

1.0

1.6

1.8

VDC

g

CE(on)

IC = 6.0 A,

VGE = 4.0 V

TJ = 150°C

0.9

1.5

1.8

DC

VGE = 4.0 V

TJ = −40°C

1.1

1.65

1.9*

I

80A

TJ = 25°C

1.3

1.8

2.0*

IC = 8.0 A,

VGE = 4.0 V

TJ = 150°C

1.2

1.7

1.9

VGE = 4.0 V

TJ = −40°C

1.4

1.8

2.0*

I

10 A

TJ = 25°C

1.4

2.0

2.2

IC = 10 A,

VGE = 4.0 V

TJ = 150°C

1.5

2.0

2.3*

VGE = 4.0 V

TJ = −40°C

1.4

2.0

2.2

I

10 A

TJ = 25°C

1.3

1.9

2.1

IC = 10 A,

VGE = 4.5 V

TJ = 150°C

1.3

1.9

2.1

VGE = 4.5 V

TJ = −40°C

1.4

1.95

2.1*

Forward Transconductance

gfs

VCE = 5.0 V, IC = 6.0 A

TJ = −40°C to

150

°C

8.0

15

25

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

V

25 V V

0V

T

40

°C

400

650

1000

pF

Output Capacitance

COSS

VCC = 25 V, VGE = 0 V

f = 1.0 MHz

TJ = −40°C to

150

°C

30

55

100

Transfer Capacitance

CRSS

f = 1.0 MHz

150

°C

3.0

4.5

8.0

SWITCHING CHARACTERISTICS

Turn−Off Delay Time (Inductive)

td(off)

VCC = 300 V, IC = 6.5 A

R

10k

Ω L 300 H

TJ = 25°C

−

4.0

10

µSec

y(

)

d(off)

CC

, C

RG = 1.0 kΩ, L = 300 µH

TJ = 150°C

−

4.5

10

µ

Fall Time (Inductive)

tf

VCC = 300 V, IC = 6.5 A

R

10k

Ω L 300 H

TJ = 25°C

−

6.0

12

()

f

CC

, C

RG = 1.0 kΩ, L = 300 µH

TJ = 150°C

−

10

12

Turn−Off Delay Time (Resistive)

td(off)

VCC = 300 V, IC = 6.5 A

R

10k

Ω R

46

Ω

TJ = 25°C

−

3.0

10

µSec

y(

)

d(off)

CC

, C

RG = 1.0 kΩ, RL = 46 Ω,

TJ = 150°C

−

3.5

10

µ

Fall Time (Resistive)

tf

VCC = 300 V, IC = 6.5 A

R

10k

Ω R

46

Ω

TJ = 25°C

−

8.0

15

()

f

CC

, C

RG = 1.0 kΩ, RL = 46 Ω,

TJ = 150°C

−

12

15

Turn−On Delay Time

td(on)

VCC = 10 V, IC = 6.5 A

R

10k

Ω R

15

Ω

TJ = 25°C

−

0.7

4.0

µSec

y

d(on)

CC

, C

RG = 1.0 kΩ, RL = 1.5 Ω

TJ = 150°C

−

0.7

4.0

µ

Rise Time

tr

VCC = 10 V, IC = 6.5 A

R

10k

Ω R

15

Ω

TJ = 25°C

−

4.0

7.0

r

CC

, C

RG = 1.0 kΩ, RL = 1.5 Ω

TJ = 150°C

−

5.0

7.0

3. Pulse Test: Pulse Width

v 300 µS, Duty Cycle v 2%.

*Maximum Value of Characteristic across Temperature Range.

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