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NE678M04 Datasheet(PDF) 1 Page - NEC

Part No. NE678M04
Description  MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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NE678M04 Datasheet(HTML) 1 Page - NEC

   
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NE678M04
MEDIUM POWER NPN SILICON
HIGH FREQUENCY TRANSISTOR
2.05±0.1
1.25±0.1
+0.30
+0.01
-0.05
(leads 1, 3 and ,4)
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan.
4.
DESCRIPTION
The NE678M04 is fabricated using NEC's HFT3 wafer pro-
cess. With a transition frequency of 12 GHz, the NE678M04 is
usable in applications from 100 MHz to 3 GHz. The NE678M04
provides P1dB of 18 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
The NE678M04 is housed in NEC's new low profile/flat lead
style "M04" package
HIGH GAIN BANDWIDTH:
fT = 12 GHz
HIGH OUTPUT POWER:
P-1dB = 18 dBm at 1.8 GHz
HIGH LINEAR GAIN:
GL = 13 dB at 1.8 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
PART NUMBER
NE678M04
PACKAGE OUTLINE
M04
EIAJ3 REGISTRATION NUMBER
2SC5753
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
100
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
100
hFE
DC Current1 Gain at VCE = 3 V, IC = 30 mA
75
120
150
P1dB
Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 10 mA,
dBm
18.0
f = 1.8 GHz, Pin = 7 dBm
GL
Linear Gain at VCE = 2.8 V, IC = 10 mA, f = 1.8 GHz, Pin = -5 dBm
dB
13.0
MAG
Maximum Available Gain4 at VCE = 3 V, IC = 30 mA, f = 2 GHz
dBm
13.5
|S21E|2
Insertion Power Gain at VCE = 3 V, IC = 30 mA, f = 2 GHz
dB
8.0
10.5
ηc
Collector Efficiency at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz,
%
55
Pin = 7 dBm
NF
Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt
dB
1.7
2.5
fT
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz
GHz
12.0
Cre
Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz
pF
0.42
0.7
ELECTRICAL CHARACTERISTICS (TA = 25°C)
California Eastern Laboratories
MAG =
|S21|
|S12|
K - 1
).
2
(K ±


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