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NE678M04 Datasheet(PDF) 2 Page - NEC

Part No. NE678M04
Description  MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
Download  7 Pages
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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NE678M04 Datasheet(HTML) 2 Page - NEC

   
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Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB.
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9.0
VCEO
Collector to Emitter Voltage
V
6.0
VEBO
Emitter to Base Voltage
V
2.0
IC
Collector Current
mA
100
PT
Total Power Dissipation2
mW
205
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
PART NUMBER
QUANTITY
NE678M04-T2
3k pcs./reel
ORDERING INFORMATION
SYMBOLS
PARAMETERS
UNITS
RATINGS
Rth j-a
Thermal Resistance from
°C/W
600
Junction to Ambient
THERMAL RESISTANCE
Note:
1. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB.
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN
vs. COLLECTOR CURRENT
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
NE678M04
300
250
200
205
150
100
50
0
25
50
75
100
125
150
Mounted on Glass Epoxy PCB
(1.08 cm
2 x 1.0 mm (t) )
1.0
f= 1 MHz
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
100
90
80
70
60
50
40
30
20
10
02
4
6
8
700
µA
600
µA
500
µA
400
µA
300
µA
200
µA
IB =100
µA
1000
VCE = 3 V
100
10
0.1
1
10
100
Ambient Temperature TA (ºC)
Collector to Base Voltage VCB (V)
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)


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