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CC2560ARVMR Datasheet(PDF) 9 Page - Texas Instruments |
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CC2560ARVMR Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 53 page  CC2560A NRND; CC2564 NRND 9 CC2560A, CC2560B, CC2564, CC2564B www.ti.com SWRS121E – JULY 2012 – REVISED JANUARY 2016 Submit Documentation Feedback Product Folder Links: CC2560A CC2560B CC2564 CC2564B Specifications Copyright © 2012–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (1) Maximum allowed depends on accumulated time at that voltage: VDD_IN is defined in Section 7.1, Reference Design for Power and Radio Connections. (2) Analog pins: BT_RF, XTALP, and XTALM (3) The reference design supports a temperature range of –20°C to 70°C because of the operating conditions of the crystal. 5 Specifications Unless otherwise indicated, all measurements are taken at the device pins of the TI test evaluation board (EVB). All specifications are over process, voltage, and temperature, unless otherwise indicated. 5.1 Absolute Maximum Ratings (1) Over operating free-air temperature range (unless otherwise indicated). All parameters are measured as follows: VDD_IN = 3.6 V and VDD_IO = 1.8 V (unless otherwise indicated). PARAMETERS MIN MAX UNIT Supply voltage range VDD_IN –0.5 4.8 V(1) VDDIO_1.8V –0.5 2.145 V Input voltage to analog pins(2) –0.5 2.1 V Input voltage to all other pins –0.5 VDD_IO + 0.5 V Bluetooth RF inputs 10 dBm Operating ambient temperature range, TA (3) –40 85 °C Storage temperature range, Tstg –55 125 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 5.2 ESD Ratings VALUE UNIT V(ESD) electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±500 V Charged device model (CDM), per JEDEC specification JESD22- ±YYY V C101(2) ±250 5.3 Power-On Hours DEVICE CONDITIONS POWER-ON HOURS CC256x Duty cycle = 25% active and 75% sleep Tambient = 70ºC 15,400 (7 Years) (1) The device can be reliably operated for 7 years at Tambient of 85°C, assuming 25% active mode and 75% sleep mode (15,400 cumulative active power-on hours). (2) A crystal-based solution is limited by the temperature range required for the crystal to meet 20 ppm. 5.4 Recommended Operating Conditions RATING CONDITION SYM MIN MAX UNIT Power supply voltage VDD_IN 2.2 4.8 V I/O power supply voltage VDD_IO 1.62 1.92 V High-level input voltage Default VIH 0.65 x VDD_IO VDD_IO V Low-level input voltage Default VIL 0 0.35 x VDD_IO V I/O input rise and all times,10% to 90% — asynchronous mode tr and tf 1 10 ns I/O input rise and fall times, 10% to 90% — synchronous mode (PCM) 1 2.5 ns Voltage dips on VDD_IN (VBAT) duration = 577 μs to 2.31 ms, period = 4.6 ms 400 mV Maximum ambient operating temperature(1) (2) –40 85 °C |
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