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TSM160N10LCR Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM160N10LCR Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM160N10LCR Taiwan Semiconductor 1 Version: A1610 N-Channel Power MOSFET 100V, 46A, 16m Ω FEATURES ● Low R DS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and R g tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● BLDC Motor Control ● Telecom power ● Primary and Secondary Side Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 100 V RDS(on) (max) VGS = 10V 16 m Ω VGS = 4.5V 20 Qg 36 nC PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TC = 25°C ID 46 A TA = 25°C 8 Pulsed Drain Current IDM 184 A Single Pulse Avalanche Current (Note 2) IAS 26 A Single Pulse Avalanche Energy (Note 2) EAS 101 mJ Total Power Dissipation TC = 25°C PD 83 W TC = 125°C 17 Total Power Dissipation TA = 25°C PD 2.6 W TA = 125°C 0.5 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.5 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. |
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