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2SK3388 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part No. 2SK3388
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Download  6 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK3388 Datasheet(HTML) 5 Page - Toshiba Semiconductor

   
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2SK3388
2002-02-06
5
Pulse width tw (s)
rth – tw
Drain-source voltage VDS (V)
Safe operating area
Channel temperature (initial) Tch (°C)
EAS – Tch
RG = 25 W
VDD = 50 V, L = 2.06 mH
÷
÷
ø
ö
ç
ç
è
æ
-
×
×
×
=
VDD
BVDSS
BVDSS
2
I
L
2
1
ΕAS
Waveform
IAR
BVDSS
VDD
VDS
Test circuit
-15 V
15 V
1
0.1
0.00001
0.0001
10
0.001
0.01
0.1
1
10
Single pulse
0.2
0.1
0.05
0.02
0.01
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.0°C/W
Duty
= 0.5
0.01
0.1
1
10
100
1000
1
10
100
DC operation
Tc
= 25°C
100
ms*
1 ms*
ID max (pulsed) *
* Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max
(continuous)
VDSS max
500
400
300
200
100
0
25
50
75
100
125
150


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