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BSH111 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BSH111
Description  N-channel enhancement mode field-effect transistor
Download  13 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH111 Datasheet(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 26 April 2002
3 of 13
9397 750 09629
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
Pder
120
0
50
100
150
200
Tsp (°C)
(%)
03aa25
0
40
80
120
0
50
100
150
200
Tsp (°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03aa71
10-2
10-1
1
10
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
Limit RDSon = VDS/ ID
1ms
tp =10 µs
100 µs


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