Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

BSH111 Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BSH111
Description  N-channel enhancement mode field-effect transistor
Download  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH111 Datasheet(HTML) 5 Page - NXP Semiconductors

  BSH111 Datasheet HTML 1Page - NXP Semiconductors BSH111 Datasheet HTML 2Page - NXP Semiconductors BSH111 Datasheet HTML 3Page - NXP Semiconductors BSH111 Datasheet HTML 4Page - NXP Semiconductors BSH111 Datasheet HTML 5Page - NXP Semiconductors BSH111 Datasheet HTML 6Page - NXP Semiconductors BSH111 Datasheet HTML 7Page - NXP Semiconductors BSH111 Datasheet HTML 8Page - NXP Semiconductors BSH111 Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 13 page
background image
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 26 April 2002
5 of 13
9397 750 09629
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID =10 µA; VGS =0V
Tj =25 °C55
75
-
V
Tj = −55 °C50
-
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Figure 9
Tj =25 °C
0.4
1.0
1.3
V
Tj = 150 °C
0.3
-
-
V
Tj = −55 °C
-
-
2.5
V
IDSS
drain-source leakage current
VDS = 44 V; VGS =0V
Tj =25 °C
-
0.01
1.0
µA
Tj = 150 °C-
-
10
µA
IGSS
gate-source leakage current
VGS = ±8 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state
resistance
VGS = 2.5 V; ID =75mA;
Figure 7 and 8
Tj =25 °C
-
2.4
5
Tj = 150 °C
-
-
7.4
VGS = 4.5 V; ID = 500 mA;
Figure 7 and 8
Tj =25 °C
-
2.3
4
VGS = 1.8 V; ID =75mA;
Figure 7 and 8
Tj =25 °C
-
3.1
8
Dynamic characteristics
gfs
forward transconductance
VDS = 10 V; ID = 200 mA;
Figure 11
100
380
-
mS
Qg(tot)
total gate charge
ID = 0.5 A; VDS =44V;
VGS =8V; Figure 14
-
1.0
-
nC
Qgs
gate-source charge
-
0.05
-
nC
Qgd
gate-drain (Miller) charge
-
0.5
-
nC
Ciss
input capacitance
VGS =0V; VDS =10V;
f = 1 MHz; Figure 12
-17
40
pF
Coss
output capacitance
-
7
30
pF
Crss
reverse transfer capacitance
-
4
10
pF
ton
turn-on time
VDD = 50 V; RD = 250 Ω;
VGS =10V; RG =50 Ω;
RGS =50 Ω
-
4
10
ns
toff
turn-off time
-
11
15
ns


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn