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NTE2430 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE2430 Datasheet(HTML) 1 Page - NTE Electronics |
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NTE2430 Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431) Description: The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications. Absolute Maximum Ratings: Collector–Base Voltage (Open Emitter), VCBO 400V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage (Open Base), VCEO 350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage (Open Collector), VEBO 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Collector Current, IC 1A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base Current, IB 500mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot 1W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, TJ +150 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Ambient (Note 1), RthJA 125K/W . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm. Electrical Characteristics: (TJ = +25°C unles otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICES VCE = 300V, IB = 0 – – 20 nA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 10 µA Collector–Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 4mA – – 500 mV Base–Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 4mA – – 1.3 V DC Current Gain hFE VCE = 10V, IC = 20mA 40 – – Collector Capacitance Cc IE = Ie = 0, VCB = 10, f = 1MHz – – 2 pF Transitional Frequency fT VCE = 10V, IC = 10mA, f = 5MHz 70 – – MHz |
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