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NTE2430 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2430
Description  Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431)
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2430 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2430
Silicon NPN Transistor
High Voltage Amp/Switch
(Compl to NTE2431)
Description:
The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (Open Base), VCEO
350V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage (Open Collector), VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, IC
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA
125K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICES
VCE = 300V, IB = 0
20
nA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
10
µA
Collector–Emitter Saturation Voltage
VCE(sat) IC = 50mA, IB = 4mA
500
mV
Base–Emitter Saturation Voltage
VBE(sat)
IC = 50mA, IB = 4mA
1.3
V
DC Current Gain
hFE
VCE = 10V, IC = 20mA
40
Collector Capacitance
Cc
IE = Ie = 0, VCB = 10, f = 1MHz
2
pF
Transitional Frequency
fT
VCE = 10V, IC = 10mA, f = 5MHz
70
MHz


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