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DRV5055A1QDBZT Datasheet(PDF) 4 Page - Texas Instruments |
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DRV5055A1QDBZT Datasheet(HTML) 4 Page - Texas Instruments |
4 / 30 page 4 DRV5055 SBAS640 – JANUARY 2018 www.ti.com Product Folder Links: DRV5055 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS- 001(1) ±2500 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750 (1) There are two isolated operating VCC ranges. For more information see the Operating VCC Ranges section. (2) Power dissipation and thermal limits must be observed. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Power supply voltage(1) 3 3.63 V 4.5 5.5 IO Output continuous current –1 1 mA TA Operating ambient temperature(2) –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) DRV5055 UNIT SOT-23 (DBZ) TO-92 (LPG) 3 PINS 3 PINS RθJA Junction-to-ambient thermal resistance 170 121 °C/W RθJC(top) Junction-to-case (top) thermal resistance 66 67 °C/W RθJB Junction-to-board thermal resistance 49 97 °C/W YJT Junction-to-top characterization parameter 1.7 7.6 °C/W YJB Junction-to-board characterization parameter 48 97 °C/W (1) B is the applied magnetic flux density. (2) VN describes voltage noise on the device output. If the full device bandwidth is not needed, noise can be reduced with an RC filter. 6.5 Electrical Characteristics for VCC = 3 V to 3.63 V and 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT ICC Operating supply current 6 10 mA tON Power-on time (see Figure 11) B = 0 mT, no load on OUT 175 330 µs fBW Sensing bandwidth 20 kHz td Propagation delay time From change in B to change in OUT 10 µs BND Input-referred RMS noise density VCC = 5 V 130 nT/ √Hz VCC = 3.3 V 215 BN Input-referred noise BND × 6.6 × √20 kHz VCC = 5 V 0.12 mTPP VCC = 3.3 V 0.2 VN Output-referred noise(2) BN × S DRV5055A1 12 mVPP DRV5055A2 6 DRV5055A3 3 DRV5055A4 1.5 |
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