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DRV5055A1QDBZT Datasheet(PDF) 4 Page - Texas Instruments

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Part # DRV5055A1QDBZT
Description  Ratiometric Linear Hall Effect Sensor
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

DRV5055A1QDBZT Datasheet(HTML) 4 Page - Texas Instruments

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DRV5055
SBAS640 – JANUARY 2018
www.ti.com
Product Folder Links: DRV5055
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-
001(1)
±2500
V
Charged-device model (CDM), per JEDEC specification
JESD22-C101(2)
±750
(1)
There are two isolated operating VCC ranges. For more information see the Operating VCC Ranges section.
(2)
Power dissipation and thermal limits must be observed.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Power supply voltage(1)
3
3.63
V
4.5
5.5
IO
Output continuous current
–1
1
mA
TA
Operating ambient temperature(2)
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
DRV5055
UNIT
SOT-23 (DBZ)
TO-92 (LPG)
3 PINS
3 PINS
RθJA
Junction-to-ambient thermal resistance
170
121
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
66
67
°C/W
RθJB
Junction-to-board thermal resistance
49
97
°C/W
YJT
Junction-to-top characterization parameter
1.7
7.6
°C/W
YJB
Junction-to-board characterization parameter
48
97
°C/W
(1)
B is the applied magnetic flux density.
(2)
VN describes voltage noise on the device output. If the full device bandwidth is not needed, noise can be reduced with an RC filter.
6.5 Electrical Characteristics
for VCC = 3 V to 3.63 V and 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS(1)
MIN
TYP
MAX
UNIT
ICC
Operating supply current
6
10
mA
tON
Power-on time (see Figure 11)
B = 0 mT, no load on OUT
175
330
µs
fBW
Sensing bandwidth
20
kHz
td
Propagation delay time
From change in B to change in OUT
10
µs
BND
Input-referred RMS noise density
VCC = 5 V
130
nT/
√Hz
VCC = 3.3 V
215
BN
Input-referred noise
BND × 6.6 × √20 kHz
VCC = 5 V
0.12
mTPP
VCC = 3.3 V
0.2
VN
Output-referred noise(2)
BN × S
DRV5055A1
12
mVPP
DRV5055A2
6
DRV5055A3
3
DRV5055A4
1.5


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