4

DRV5011

SLVSCY6 – DECEMBER 2017

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(1)

Device-sourced current is negative. Device-sunk current is positive.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Power supply voltage

2.5

5.5

V

Output voltage

OUT

0

V

OUT

–5

20

mA

Operating junction temperature

140

°C

Operating ambient temperature

–40

135

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

DRV5011

UNIT

SOT-23 (DBZ)

X2SON (DMR)

3 PINS

4 PINS

Junction-to-ambient thermal resistance

356

159

°C/W

128

77

°C/W

Junction-to-board thermal resistance

94

102

°C/W

Junction-to-top characterization parameter

11.4

0.9

°C/W

Junction-to-board characterization parameter

92

100

°C/W

6.5 Electrical Characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Operating supply current

2.3

3

mA

Power-on time (see Figure 10)

40

70

µs

Propagation delay time

From change in B to change in OUT

13

25

µs

High-level output voltage

V

Low-level output voltage

0.15

0.4

V

6.6 Magnetic Characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Sensing bandwidth

30

kHz

Magnetic threshold operate point

(see Figure 8)

0.6

2

3.8

mT

Magnetic threshold release point

(see Figure 8)

–3.8

–2

–0.6

mT

2

4

6

mT