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2SK3407 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3407 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3407 2002-08-12 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications · Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) · High forward transfer admittance: |Yfs| = 7.5 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) · Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 kW) VDGR 450 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 Drain current Pulse (Note 1) IDP 40 A Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 222 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) |
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