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2SK3407 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part # 2SK3407
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3407 Datasheet(HTML) 5 Page - Toshiba Semiconductor

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2SK3407
2002-08-12
5
Channel temperature (initial) Tch (°C)
Pulse width tw (S)
Drain-source voltage VDS (V)
Safe operating area
rth – tw
-15 V
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25 W
VDD = 90 V, L = 3.7 mH
÷
÷
ø
ö
ç
ç
è
æ
-
×
×
×
=
VDD
BVDSS
BVDSS
2
I
L
2
1
ΕAS
EAS – Tch
0.01
10
m
0.1
1
10
100
m
1 m
10 m
100 m
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 3.125°C/W
Duty
= 0.5
0.2
0.1
Single pulse
0.05
0.02
0.01
0.001
0.003
0.005
0.03
0.05
0.3
0.5
3
5
100
200
300
50
100
0
400
25
75
150
125
0.01
1
0.1
1
10
100
10
100
1000
* Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse) *
ID max
(continuous)
DC operation
Tc
= 25°C
100
ms *
1 ms *
VDSS max


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