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2SK3407 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3407 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3407 2002-08-12 5 Channel temperature (initial) Tch (°C) Pulse width tw (S) Drain-source voltage VDS (V) Safe operating area rth – tw -15 V 15 V Test circuit Wave form IAR BVDSS VDD VDS RG = 25 W VDD = 90 V, L = 3.7 mH ÷ ÷ ø ö ç ç è æ - × × × = VDD BVDSS BVDSS 2 I L 2 1 ΕAS EAS – Tch 0.01 10 m 0.1 1 10 100 m 1 m 10 m 100 m 1 10 T PDM t Duty = t/T Rth (ch-c) = 3.125°C/W Duty = 0.5 0.2 0.1 Single pulse 0.05 0.02 0.01 0.001 0.003 0.005 0.03 0.05 0.3 0.5 3 5 100 200 300 50 100 0 400 25 75 150 125 0.01 1 0.1 1 10 100 10 100 1000 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) DC operation Tc = 25°C 100 ms * 1 ms * VDSS max |
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