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2SK3125 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3125
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3125 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SK3125
2002-08-23
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
¾
¾
100
mA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
¾
¾
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
¾
3.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 30 A
¾
5.3
7.0
m
W
Forward transfer admittance
ïYfsï
VDS = 10 V, ID = 30 A
30
60
¾
S
Input capacitance
Ciss
¾
4600
¾
Reverse transfer capacitance
Crss
¾
1400
¾
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
2300
¾
pF
Rise time
tr
¾
25
¾
Turn-ON time
ton
¾
40
¾
Fall time
tf
¾
150
¾
Switching time
Turn-OFF time
toff
¾
425
¾
ns
Total gate charge
(gate-source plus gate-drain)
Qg
¾
130
¾
Gate-source charge
Qgs
¾
90
¾
Gate-drain (“miller”) charge
Qgd
VDD ~- 24 V, VGS = 10 V, ID = 70 A
¾
40
¾
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
¾
¾
¾
70
A
Pulse drain reverse current
(Note 1)
IDRP
¾
¾
¾
210
A
Forward voltage (diode)
VDSF
IDR = 70 A, VGS = 0 V
¾
¾
-1.7
V
Reverse recovery time
trr
¾
150
¾
ns
Reverse recovery charge
Qrr
IDR = 70 A, VGS = 0 V,
dIDR/dt = 50 A/ms
¾
225
¾
nC
Marking
Type
TOSHIBA
K3125
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, tw = 10 ms
0 V
10 V
VGS
RL = 0.5 W
VDD ~- 15 V
ID = 30 A
VOUT


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