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2SK3125 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3125 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3125 2002-08-23 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ¾ ¾ 100 mA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 30 ¾ ¾ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 ¾ 3.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 30 A ¾ 5.3 7.0 m W Forward transfer admittance ïYfsï VDS = 10 V, ID = 30 A 30 60 ¾ S Input capacitance Ciss ¾ 4600 ¾ Reverse transfer capacitance Crss ¾ 1400 ¾ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ¾ 2300 ¾ pF Rise time tr ¾ 25 ¾ Turn-ON time ton ¾ 40 ¾ Fall time tf ¾ 150 ¾ Switching time Turn-OFF time toff ¾ 425 ¾ ns Total gate charge (gate-source plus gate-drain) Qg ¾ 130 ¾ Gate-source charge Qgs ¾ 90 ¾ Gate-drain (“miller”) charge Qgd VDD ~- 24 V, VGS = 10 V, ID = 70 A ¾ 40 ¾ nC Source-Drain Ratings and Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ 70 A Pulse drain reverse current (Note 1) IDRP ¾ ¾ ¾ 210 A Forward voltage (diode) VDSF IDR = 70 A, VGS = 0 V ¾ ¾ -1.7 V Reverse recovery time trr ¾ 150 ¾ ns Reverse recovery charge Qrr IDR = 70 A, VGS = 0 V, dIDR/dt = 50 A/ms ¾ 225 ¾ nC Marking ※ Type TOSHIBA K3125 ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) Duty <= 1%, tw = 10 ms 0 V 10 V VGS RL = 0.5 W VDD ~- 15 V ID = 30 A VOUT |
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