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NTE2410 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE2410
Description  Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2410 Datasheet(HTML) 2 Page - NTE Electronics

   
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 3)
DC Current Gain
hFE
IC = 1mA, VCE = 5V
80
IC = 10mA, VCE = 5V
80
250
IC = 50mA, VCE = 5V
30
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 1mA
0.15
V
IC = 50mA, IB = 5mA
0.20
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 10mA, IB = 1mA
1.0
V
IC = 50mA, IB = 5mA
1.0
V
Note 3. Pulse Test: Pulse Width = 300
µs, Duty Cycle = 2%.
.098
(2.5)
Max
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)
.016 (0.48)
.037 (0.95)
B
C
E


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