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2N5061RLR Datasheet(PDF) 3 Page - ON Semiconductor

Part No. 2N5061RLR
Description  Sensitive Gate Silicon Controlled Rectifiers
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5061RLR Datasheet(HTML) 3 Page - ON Semiconductor

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2N5060 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VAK = Rated VDRM or VRRM)TC = 25°C
TC = 110°C
IDRM, IRRM
10
50
mA
mA
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4)
(ITM = 1.2 A peak @ TA = 25°C)
VTM
1.7
V
Gate Trigger Current (Continuous DC) (Note 5)
*(VAK = 7.0 Vdc, RL = 100 W)TC = 25°C
TC = −40°C
IGT
200
350
mA
Gate Trigger Voltage (Continuous DC) (Note 5)
TC = 25°C
*(VAK = 7.0 Vdc, RL = 100 W)TC = −40°C
VGT
0.8
1.2
V
*Gate Non−Trigger Voltage
(VAK = Rated VDRM, RL = 100 W)TC = 110°C
VGD
0.1
V
Holding Current (Note 5)
TC = 25°C
*(VAK = 7.0 Vdc, initiating current = 20 mA)
TC = −40°C
IH
5.0
10
mA
Turn-On Time
Delay Time
Rise Time
(IGT = 1.0 mA, VD = Rated VDRM,
Forward Current = 1.0 A, di/dt = 6.0 A/
ms
td
tr
3.0
0.2
ms
Turn-Off Time
(Forward Current = 1.0 A pulse,
Pulse Width = 50
ms,
0.1% Duty Cycle, di/dt = 6.0 A/
ms,
dv/dt = 20 V/
ms, IGT = 1 mA)
2N5060, 2N5061
2N5062, 2N5064
tq
10
30
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(Rated VDRM, Exponential)
dv/dt
30
V/
ms
3. RGK = 1000 W is included in measurement.
4. Forward current applied for 1 ms maximum duration, duty cycle
p 1%.
5. RGK current is not included in measurement.
*Indicates JEDEC Registered Data.
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)


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