DMN10H700S-7 datasheet(3/7 Pages) DIODES

Part #	DMN10H700S-7

Description	100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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3 / 7 page

DMN10H700S

Document number: DS38103 Rev. 3 - 2

3 of 7

www.diodes.com

October 2017

DMN10H700S

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V

GS=3.8V

V

GS=4.0V

V

GS=4.5V

V

GS=5.0V

V

GS=6.0V

V

GS=10.0V

0

0.5

1

1.5

2

2.5

3

1

2

3

4

5

6

V

GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

V

DS=5V

-55

℃

25

℃

85

℃

125

℃

150

℃

0

1

2

3

4

5

6

7

8

9

10

0

4

8

12

16

20

V

GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

I

D=1.0A

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

0

0.5

1

1.5

2

2.5

3

3.5

4

I

D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

V

GS=6V

V

GS=10V

0

0.5

1

1.5

2

2.5

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction

Temperature

V

GS=10V, ID=1.5A

0

1

2

3

4

5

6

0

0.5

1

1.5

2

2.5

3

3.5

4

I

D, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

V

GS= 10V

-55

℃ 25℃

85

℃

125

℃

150

℃

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