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TC55V4000ST-85 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TC55V4000ST-85 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 10 page  TC55V4000ST-70,-85 2001-11-30 3/10 DC RECOMMENDED OPERATING CONDITIONS (Ta ==== −−−−40° to 85°C) 2.3 V~3.6 V SYMBOL PARAMETER MIN TYP MAX UNIT VDD Power Supply Voltage 2.3 3.0 3.6 V VIH Input High Voltage 2.2 VDD + 0.3 V VIL Input Low Voltage −0.3* VDD × 0.22 V VDH Data Retention Supply Voltage 1.5 3.6 V *: −3.0 V when measured at a pulse width of 50 ns DC CHARACTERISTICS (Ta ==== −−−−40° to 85°C, VDD = === 2.3 to 3.6 V) SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT IIL Input Leakage Current VIN = 0 V~VDD ±1.0 µA IOH Output High Current VOH = VDD − 0.5 V −0.5 mA IOL Output Low Current VOL = 0.4 V 2.1 mA ILO Output Leakage Current CE = VIH or OE = VIH or R/W = VIL, VOUT = 0 V~VDD ±1.0 µA min 50 lDDO1 CE = VIL and R/W = VIH, IOUT = 0 mA, Other Input = VIH/VIL 1 µs 10 mA min 45 lDDO2 Operating Current CE = 0.2 V and R/W = VDD − 0.2 V, IOUT = 0 mA, Other Input = VDD − 0.2 V/0.2 V VDD = 3.0 V ± 10% tcycle 1 µs 5 mA lDDS1 CE = VIH 3 mA Ta = 25°C 0.6 VDD = 3.0 V ± 10% Ta = −40~85°C 6 Ta = 25°C 0.7 VDD = 3.3 V ± 0.3 V Ta = −40~85°C 7 Ta = 25°C 0.05 0.5 Ta = −40~40°C 1 lDDS2 Standby Current CE = VDD − 0.2 V, VDD = 1.5 V~3.6 V VDD = 3 V Ta = −40~85°C 5 µA CAPACITANCE (Ta ==== 25°C, f ==== 1 MHz) SYMBOL PARAMETER TEST CONDITION MAX UNIT CIN Input Capacitance VIN = GND 10 pF COUT Output Capacitance VOUT = GND 10 pF Note: This parameter is periodically sampled and is not 100% tested. |
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