Electronic Components Datasheet Search |
|
TC51WHM616AXBN65 Datasheet(PDF) 9 Page - Toshiba Semiconductor |
|
TC51WHM616AXBN65 Datasheet(HTML) 9 Page - Toshiba Semiconductor |
9 / 11 page TC51WHM616AXBN65,70 2002-08-22 9/11 Notes: (1) Stresses greater than listed under “Absolute Maximum Ratings” may cause permanent damage to the device. (2) All voltages are reference to GND. (3) IDDO depends on the cycle time. (4) IDDO depends on output loading. Specified values are defined with the output open condition. (5) AC measurements are assumed tR, tF = 5 ns. (6) Parameters tOD, tODO, tBD and tODW define the time at which the output goes the open condition and are not output voltage reference levels. (7) Data cannot be retained at deep power-down stand-by mode. (8) If OE is high during the write cycle, the outputs will remain at high impedance. (9) During the output state of I/O signals, input signals of reverse polarity must not be applied. (10) If CE1 or LB / UB goes LOW coincident with or after WE goes LOW, the outputs will remain at high impedance. (11) If CE1 or LB / UB goes HIGH coincident with or before WE goes HIGH, the outputs will remain at high impedance. |
Similar Part No. - TC51WHM616AXBN65 |
|
Similar Description - TC51WHM616AXBN65 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |