PNZ108CL datasheet(2/3 Pages) PANASONIC

Part #	PNZ108CL

Description	Silicon NPN Phototransistor

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Phototransistors

PNZ108CL

Directivity characteristics

0˚

10˚

20˚

30˚

40˚

50˚

60˚

70˚

80˚

90˚

Spectral sensitivity characteristics

100

80

60

40

20

Wavelength

λ (nm)

400

600

800

1000

1200

0

200

VCE = 10V

Ta = 25˚C

PC — Ta

120

100

80

60

40

20

Ambient temperature

Ta (˚C )

0

20406080

100

0

– 20

Ta = 25˚C

T = 2856K

ICE(L) — VCE

20

16

12

4

8

0

Collector to emitter voltage

V

CE (V)

020

16

812

424

ICE(L) — L

10 2

10

1

Illuminance

L (lx)

10

10 2

10 3

10 –2

10 –1

1

VCE = 10V

Ta = 25˚C

T = 2856K

VCE = 10V

L = 500 lx

T = 2856K

ICE(L) — Ta

10 2

1

10

Ambient temperature

Ta (˚C )

– 40

0

40

80

120

10 –1

ICEO — Ta

10 2

1

10 –1

10

Ambient temperature

Ta (˚C )

VCE = 10V

10 –2

– 20

0

40

80

20

60

100

tr — ICE(L)

Collector photo current

I

CE(L) (mA)

VCC = 10V

Ta = 25˚C

10 4

10 3

10 2

10

1

10 –1

10

10 2

1

10 –2

tf — ICE(L)

Collector photo current

I

CE(L) (mA)

VCC = 10V

Ta = 25˚C

10 4

10 3

10 2

10

1

10 –1

10

10 2

1

10 –2

20

100

80

60

40

100 lx

500 lx

250 lx

750 lx

L = 1500 lx

1000 lx

RL = 1kΩ

500

Ω

100

Ω

RL = 1kΩ

500

Ω

100

Ω

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PNZ108CL Datasheet(PDF) 2 Page - Panasonic Semiconductor

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