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OM75N05SA Datasheet(PDF) 6 Page - List of Unclassifed Manufacturers

Part # OM75N05SA
Description  LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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OM75N05SA Datasheet(HTML) 6 Page - List of Unclassifed Manufacturers

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OM75N05SA (T
C = 25°C unless otherwise specified)
Avalanche Characteristics
Min.
Typ. Max. Units Test Conditions
I
AR
Avalanche Current
70
A
(repetitive or
non-repetitive,T
J = 25°C)
E
AS
Single Pulse Avalanche Energy
900
mJ
(starting T
J = 25°C,
I
D = IAR, VDD = 25 V)
E
AR
Repetitive Avalanche Energy
200
mJ
(pulse width limited
by T
j max, d < 1%)
I
AR
Avalanche Current
40
A
(repetitive or
non-repetitive, T
J = 100°C)
Electrical Charactreristics - OFF
V
(BR)DSS
Drain-Source
50
V
I
D = 250 µA, VGS = 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
µA
V
DS = Max. Rat.
Drain Current (V
GS = 0)
1000
µA
V
DS = Max. Rat. x 0.8, TC = 125°C
I
GSS
Gate-Body Leakage
±100
nA
V
GS = ±20 V
Current (V
DS = 0)
Electrical Charactreristics - ON
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS = VGS, ID = 250 µA
R
DS(on)
Static Drain-Source On
0.018
V
GS = 10 V, ID = 40 A
Resistance
0.036
T
C = 100°C
I
D(on)
On State Drain Current
75
A
V
DS > ID(on) x RDS(on)max, VGS = 10 V
Electrical Charactreristics - Dynamic
g
fs
Forward Transconductance
25
S
V
DS > ID(on) x RDS(on)max, ID= 40 A
C
ies
Input Capacitance
4100
pF
V
DS = 25 V
C
oes
Output Capacitance
1800
pF
V
GS = 0
C
res
Reverse Transfer Capacitance
420
pF
f = 1 mHz
Electrical Charactreristics - Switching On
T
d(on)
Turn-On Time
190
nS
V
DD = 20 V, ID = 40 A
t
r
Rise Time
900
nS
R
G = 50 , VGS = 10 V
(di/dt)
on
Turn-On Current Slope
150
A/µS
V
DD = 20 V, ID = 40 A
R
G = 50 , VGS = 10 V
Q
g
Total Gate Charge
130
nC
V
DD = 20 V, ID = 40 A, VGS = 10 V
Electrical Charactreristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
360
nS
V
DD = 35 V, ID = 75 A
t
f
Fall Time
280
nS
R
G = 50 , VGS = 10 V
t
cross
Cross-Over Time
600
nS
Electrical Charactreristics - Source Drain Diode
I
SD
Source Drain Current
75
A
I
SDM(*)
Source Drain Current (pulsed)
300
A
V
SD
Forward On Voltage
1.5
V
I
SD = 75 A, VGS = 0
t
rr
Reverse Recovery Time
120
nS
I
SD = 75 A, di/dt = 100 A/µs
V
R = 20 V
Q
rr
Reverse Recovery Charge
0.45
µC
I
RRM
Reverse Recovery Current
6.5
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
D.U.T.
R
L
2200
µF
3.3
µF
V
DD
V
D
R
S
V
DS
F
W
AA
A
B
B
D
S
G
G
D
S
L = 100µH
D.U.T.
85
3.3
µF
1000
µF
V
DS
R
C
+
MOS
Diode
FAST
Diode
25
B
TEST CIRCUIT FOR INDUCTIVE LOAD SWITCHING
AND DIODE REVERSE RECOVERY TIME
SWITCHING TIMES TEST CIRCUITS
FOR RESISTIVE LOAD


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