MUN5132T1G datasheet(6/12 Pages) ONSEMI

Part #	MUN5132T1G

Description	Bias Resistor Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5111T1 Series

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6

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1

Figure 7. VCE(sat) versus IC

Figure 8. DC Current Gain

1000

10

IC, COLLECTOR CURRENT (mA)

100

10

1

100

Figure 9. Output Capacitance

IC, COLLECTOR CURRENT (mA)

0

10

20

30

VO = 0.2 V

TA =−25°C

75°C

100

10

1

0.1

40

50

Figure 10. Output Current versus Input Voltage

100

10

1

0.1

0.01

0.001 0 1

2

3

4

Vin, INPUT VOLTAGE (VOLTS)

5

6

7

8

9

10

Figure 11. Input Voltage versus Output Current

0.01

0.1

1

10

40

IC, COLLECTOR CURRENT (mA)

0

20

50

75°C

25°C

TA =−25°C

50

0

10

203040

4

3

2

1

0

VR, REVERSE BIAS VOLTAGE (VOLTS)

25°C

IC/IB = 10

25°C

−25°C

VCE = 10 V

TA =75°C

f = 1 MHz

lE = 0 V

TA = 25°C

75°C

25°C

TA =−25°C

VO = 5 V

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